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FPNH10

FPNH10

C

BE

TO-92

NPN RF Transistor

This device is designed for use in low noise UHF/VHF amplifiers,

with collector currents in the 100

碌A(chǔ)

to 20 mA range in common

emitter or common base mode of operations, and in low frequency

drift, high output UHF oscillators. Sourced from Process 42.

Absolute Maximum Ratings*

Symbol

V

CEO

V

CBO

V

EBO

I

C

T

J

, T

stg

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

TA = 25擄C unless otherwise noted

Parameter

Value

25

30

3.0

50

-55 to +150

Units

V

V

V

mA

擄C

Operating and Storage Junction Temperature Range

*

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)

These ratings are based on a maximum junction temperature of 150 degrees C.

2)

These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

P

D

R

胃JC

R

胃JA

TA = 25擄C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25擄C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Max

FPNH10

350

2.8

125

357

Units

mW

mW/擄C

擄C/W

擄C/W

*

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

錚?000

Fairchild Semiconductor Corporation

FPNH10 Rev. A

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