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FPD750SOT89 Datasheet

  • FPD750SOT89

  • LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

  • 8頁

  • FILTRONIC

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L
OW
N
OISE
, H
IGH
L
INEARITY
P
ACKAGED
PHEMT
鈥?/div>
PERFORMANCE (1850 MHz)
鈾?/div>
25 dBm Output Power (P
1dB
)
鈾?/div>
18 dB Small-Signal Gain (SSG)
鈾?/div>
0.6 dB Noise Figure
鈾?/div>
39 dBm Output IP3
鈾?/div>
55% Power-Added Efficiency
鈾?/div>
Evaluation Boards Available
鈾?/div>
Available in Lead Free Finish: FPD750SOT89E
FPD750SOT89
鈥?/div>
DESCRIPTION AND APPLICATIONS
The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25
碌m
x 750
碌m
Schottky barrier Gate, defined by
high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes
parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a
range of bias conditions and input power levels. The FPD750 is available in die form and in other
packages.
Typical applications include drivers or output stages in PCS/Cellular base station high-intercept-
point LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems.
鈥?/div>
ELECTRICAL SPECIFICATIONS AT 22擄C
Parameter
Power at 1dB Gain Compression
Small-Signal Gain
Power-Added Efficiency
Noise Figure
Output Third-Order Intercept Point
(from 15 to 5 dB below P
1dB
)
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
I
DSS
I
MAX
G
M
I
GSO
|V
P
|
|V
BDGS
|
|V
BDGD
|
Symbol
P
1dB
SSG
PAE
NF
IP3
Test Conditions
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
;
P
OUT
= P
1dB
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 25% I
DSS
V
DS
= 5V; I
DS
= 50% I
DSS
Matched for optimal power
Matched for best IP3
V
DS
= 1.3 V; V
GS
= 0 V
V
DS
= 1.3 V; V
GS
鈮?/div>
+1 V
V
DS
= 1.3 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 1.3 V; I
DS
= 0.75 mA
I
GS
= 0.75 mA
I
GD
= 0.75 mA
0.7
12
12
185
36
38
39
230
375
200
1
1.0
16
16
Revised:
01/05/05
Email:
sales@filcsi.com
Min
23
16.5
Typ
25
18
50
1.0
0.6
Max
Units
dBm
dB
%
dB
RF SPECIFICATIONS MEASURED AT
f
= 1850 MHz USING CW SIGNAL
dBm
280
mA
mA
mS
15
1.3
碌A(chǔ)
V
V
V
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://www.filtronic.co.uk/semis

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