鈥?/div>
DESCRIPTION AND APPLICATIONS
The FPD750SOT343 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25
渭m
x 750
渭m
Schottky barrier Gate, defined by
high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes
parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a
range of bias conditions and input power levels. The FPD750 is available in die form and in other
packages.
Typical applications include drivers or output stages in PCS/Cellular base station high-intercept-
point LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems.
鈥?/div>
ELECTRICAL SPECIFICATIONS AT 22擄C
Parameter
Minimum Noise Figure
Output Third-Order Intercept Point
(from 15 to 5 dB below P
1dB
)
Small-Signal Gain
Power at 1dB Gain Compression
SSG
P
1dB
Symbol
NF
IP3
Test Conditions
V
DS
= 3.3 V; I
DS
= 50% I
DSS
V
DS
= 3.3 V; I
DS
= 25% I
DSS
V
DS
= 3.3 V; I
DS
= 50% I
DSS
V
DS
= 3.3 V; I
DS
= 25% I
DSS
Tuned for Optimum IP3
V
DS
= 3.3 V; I
DS
= 50% I
DSS
V
DS
= 3.3 V; I
DS
= 25% I
DSS
V
DS
= 3.3 V; I
DS
= 50% I
DSS
V
DS
= 3.3 V; I
DS
= 25% I
DSS
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
I
DSS
I
MAX
G
M
I
GSO
|V
P
|
|V
BDGS
|
|V
BDGD
|
V
DS
= 1.3 V; V
GS
= 0 V
V
DS
= 1.3 V; V
GS
鈮?/div>
+1 V
V
DS
= 1.3 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 1.3 V; I
DS
= 0.75 mA
I
GS
= 0.75 mA
I
GD
= 0.75 mA
0.7
12
12
185
19
16.5
18
17
20
18
230
375
200
5
1.0
16
18
Revised:
04/28/05
Email:
sales@filcsi.com
Min
Typ
0.6
0.3
Max
0.9
Units
dB
dBm
RF SPECIFICATIONS MEASURED AT
f
= 1850 MHz USING CW SIGNAL
35.5
38
34
dB
dBm
280
mA
mA
mS
渭A
1.3
V
V
V
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://www.filtronic.co.uk/semis
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