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FPD750SOT343CE Datasheet

  • FPD750SOT343CE

  • LOW NOISE HIGH LINEARITY PACKAGED PHEMT

  • 11頁

  • FILTRONIC

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FPD750SOT343
L
OW
N
OISE
H
IGH
L
INEARITY
P
ACKAGED P
HEMT
P
ACKAGE
:
F
EATURES
(1850MH
Z
):
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.5 dB N.F.min.
20 dBm Output Power (P1dB)
16.5 dB Small-Signal Gain (SSG)
37 dBm Output IP3
RoHS compliant (Directive 2002/95/EC)
Datasheet v3.0
R
O
HS:
G
ENERAL
D
ESCRIPTION
:
The FPD750SOT343 is a packaged depletion
mode pseudomorphic High Electron Mobility
Transistor (pHEMT). It utilizes a 0.25 碌m x 750
碌m Schottky barrier Gate. The Filtronic
0.25碌m process ensures class-leading noise
performance.
The use of a small footprint
plastic package allows for cost effective
system implementation.
T
YPICAL
A
PPLICATIONS
:
鈥?/div>
鈥?/div>
鈥?/div>
802.11a,b,g and WiMax LNAs
PCS/Cellular High Linearity LNAs
Other types of wireless infrastructure systems.
T
YPICAL
P
ERFORMANCE
1
:
RF P
ARAMETER
Power at 1dB Gain Compression
Small Signal Gain
Power-Added Efficiency
S
YMBOL
OP1dB
SSG
PAE
C
ONDITIONS
VDS = 3.3 V; IDS = 40mA
VDS = 3.3 V; IDS = 40mA
VDS = 3.3 V; IDS = 40mA
POUT = P1dB
0.9GH
Z
1.85GH
Z
2.6GH
Z
20
22
50
19
16.5
45
20
14
45
3.5GH
Z
20.5
11
50
U
NITS
dBm
dB
%
Maximum Stable Gain (|S21/S12|)
Noise Figure
Output Third-Order Intercept Point
POUT = 9 dBm per Tone
MSG
N.F.
OIP3
VDS = 3.3 V; IDS = 40mA
VDS = 3.3 V; IDS = 40mA
VDS = 3.3V; IDS = 40mA
VDS = 3.3V; IDS = 80mA
24
0.5
32
35
20
0.6
31
37
18
0.7
31
35
16
0.8
32
38
dB
dB
dBm
E
LECTRICAL
S
PECIFICATIONS
2
:
RF/DC P
ARAMETER
Frequency
Power at 1dB Gain Compression
Small Signal Gain
Saturated Drain-Source Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
S
YMBOL
f
P1dB
SSG
IDSS
GM
|VP|
|VBDGS|
|VBDGD|
胃JC
C
ONDITIONS
M
IN
T
YP
2.0
M
AX
U
NITS
GHz
dBm
dB
VDS = 3.3 V; IDS = 40mA
VDS = 3.3 V; IDS = 40mA
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; IDS = 0.75 mA
IGS = 0.75 mA
IGD = 0.75 mA
VDS > 3V
17
16
185
230
200
0.7
13
13
1.0
16
18
143
1.3
280
mA
mS
V
V
V
擄C/W
Note: 1. Based on measured data taken on applications circuits. 2. All devices are 100% RF and DC tested at
2GHz with Z
S
= Z
L
= 50 Ohms 3. T
AMBIENT
= 22擄C
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com

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