鈥?/div>
Narrowband and broadband high-
performance amplifiers
SATCOM uplink transmitters
PCS/Cellular low-voltage high-efficiency
output amplifiers
Medium-haul digital radio transmitters
E
LECTRICAL
S
PECIFICATIONS
1
:
P
ARAMETER
Power at 1dB Gain Compression
Power Gain at P1dB
Power-Added Efficiency
Maximum Stable Gain (S21/S12)
f
= 12 GHz
f
= 24 GHz
Saturated Drain-Source Current
Maximum Drain-Source Current
IDSS
IMAX
S
YMBOL
P1dB
G1dB
PAE
MSG
C
ONDITIONS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
POUT = P1dB
M
IN
24.5
9.0
T
YP
25.5
10.0
50
M
AX
U
NITS
dBm
dB
%
VDS = 8 V; IDS = 50% IDSS
15.5
11.0
16.5
12.0
110
215
135
dB
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS
鈮?/div>
+1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 0.36 mA
IGS = 0.36 mA
IGD = 0.36 mA
VDS > 3V
90
mA
mA
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
1
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
胃JC
140
1
0.7
12.0
14.5
1.0
14.0
16.0
125
10
1.3
mS
碌A(chǔ)
V
V
V
擄C/W
Note: T
Ambient
= 22擄C; RF specifications measured at
f
= 12 GHz using CW signal
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
1
2
3
