The FPD4000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount
package has been optimized for low parasitics.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
鈥?/div>
ELECTRICAL SPECIFICATIONS AT 22擄C
Parameter
Power at 1dB Gain Compression
Power Gain at dB Gain Compression
Maximum Stable Gain
S
21
/S
12
Power-Added Efficiency
at 1dB Gain Compression
3
rd
-Order Intermodulation Distortion
螕
S
and
螕
L
tuned for Optimum IP3
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (channel-to-case)
I
DSS
I
MAX
G
M
I
GSO
|V
P
|
|V
BDGS
|
|V
BDGD
|
螛
CC
IM3
PAE
Symbol
P
1dB
G
1dB
MSG
Test Conditions
V
DS
= 8V; I
DQ
= 700 mA
螕
S
and
螕
L
tuned for Optimum IP3
V
DS
= 8V; I
DQ
= 700 mA
螕
S
and
螕
L
tuned for Optimum IP3
V
DS
= 8V; I
DQ
= 700 mA
P
IN
= 0dBm, 50鈩?system
V
DS
= 8V; I
DQ
= 700 mA
螕
S
and
螕
L
tuned for Optimum IP3
V
DS
= 8V; I
DQ
= 700 mA
P
OUT
= 23 dBm (single-tone level)
V
DS
= 1.3 V; V
GS
= 0 V
V
DS
= 1.3 V; V
GS
鈮?/div>
+1 V
V
DS
= 1.3 V; V
GS
= 0 V
V
GS
= -3 V
V
DS
= 1.3 V; I
DS
= 8 mA
I
GS
= 8 mA
I
GD
= 8 mA
See Note on following page
0.7
6
20
1.9
-46
2.3
3.6
2.4
70
0.9
10
22
16
170
1.4
2.65
dBc
mA
mA
mS
碌A
V
V
V
擄C/W
50
%
18
dB
10.5
12
Min
33.5
Typ
34.5
Max
Units
dBm
RF SPECIFICATIONS MEASURED AT
f
= 1.8 GHz USING CW SIGNAL
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filtronic.co.uk/semis
Revised:
05/26/05
Email:
sales@filcsi.com
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