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FPD2250_1 Datasheet

  • FPD2250_1

  • 1.5W POWER PHEMT

  • 3頁(yè)

  • FILTRONIC

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FPD2250
1.5W P
OWER P
HEMT
F
EATURES
:
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
32 dBm Linear Output Power at 12 GHz
7.5 dB Power Gain at 12 GHz
42 dBm Output IP3
45% Power-Added Efficiency
Datasheet v3.0
L
AYOUT
:
G
ENERAL
D
ESCRIPTION
:
The
FPD2250
is
an
AlGaAs/InGaAs
pseudomorphic
High
Electron
Mobility
Transistor (PHEMT), featuring a 0.25
碌m
by
2250
碌m
Schottky barrier gate, defined by high
-resolution stepper-based photolithography.
The recessed
gate structure minimizes
parasitics to optimize performance.
The
epitaxial structure and processing have been
optimized for reliable high-power applications.
The FPD2250 is also available in the low cost
plastic SOT89 package.
T
YPICAL
A
PPLICATIONS
:
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Narrowband and broadband high-
performance amplifiers
SATCOM uplink transmitters
PCS/Cellular low-voltage high-efficiency
output amplifiers
Medium-haul digital radio transmitters
E
LECTRICAL
S
PECIFICATIONS
1
:
P
ARAMETER
Power at 1dB Gain Compression
Maximum Stable Gain (S21/S12)
Power Gain at P1dB
Power-Added Efficiency
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
Saturated Drain-Source Current
IDSS
S
YMBOL
P1dB
MSG
G1dB
PAE
IP3
C
ONDITIONS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS; POUT = P1dB
VDS = 8 V; IDS = 50% IDSS
Matched for optimal power; Tuned for best IP3
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS
鈮?/div>
+1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 2.25 mA
IGS = 2.25 mA
IGD = 2.25 mA
VDS > 6V
M
IN
31.0
8.0
6.5
T
YP
32.0
9.0
7.5
45
40
42
M
AX
U
NITS
dBm
dB
dB
%
dBm
560
700
825
mA
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
胃JC
1125
600
10
1.0
12.0
14.5
14.0
16.0
30
mA
mS
碌A(chǔ)
V
V
V
擄C/W
Note:
1
T
Ambient
= 22擄C; RF specifications measured at
f
= 12 GHz using CW signal
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com

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