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FPD1500SOT89 Datasheet

  • FPD1500SOT89

  • LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT

  • 11頁

  • FILTRONIC

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L
OW
N
OISE
, H
IGH
L
INEARITY
P
ACKAGED
PHEMTT
FPD1500SOT89
鈥?/div>
PERFORMANCE (1850 MHz)
鈾?/div>
27.5 dBm Output Power (P
1dB
)
鈾?/div>
17 dB Small-Signal Gain (SSG)
鈾?/div>
1.2 dB Noise Figure
鈾?/div>
42 dBm Output IP3
鈾?/div>
50% Power-Added Efficiency
鈾?/div>
Evaluation Boards Available
鈾?/div>
Available in Lead Free Finish: FPD1500SOT89E
DESCRIPTION AND APPLICATIONS
The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25 x 1500
渭m
Schottky barrier Gate, defined by high-
resolution stepper-based photolithography. The recessed and offset Gate structure minimizes
parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a
range of bias conditions and input power levels. The FPD1500 is available in die form and in other
packages. Typical applications include drivers or output stages in PCS/Cellular base station high-
intercept-point LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems.
鈥?/div>
鈥?/div>
ELECTRICAL SPECIFICATIONS AT 22擄C
Parameter
Power at 1dB Gain Compression
Small-Signal Gain
Power-Added Efficiency
P
OUT
= P
1dB
Noise Figure
Output Third-Order Intercept Point
(from 15 to 5 dB below P
1dB
)
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
I
DSS
I
MAX
G
M
I
GSO
|V
P
|
|V
BDGS
|
|V
BDGD
|
NF
IP3
V
DS
= 5.0V; I
DS
= 50% I
DSS
V
DS
= 5.0V; I
DS
= 50% I
DSS
Matched for best P
1dB
Matched for best IP3 at 50% I
DSS
V
DS
= 1.3 V; V
GS
= 0 V
V
DS
= 1.3 V; V
GS
鈮?/div>
+1 V
V
DS
= 1.3 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 1.3 V; I
DS
= 1.5 mA
I
GS
= 1.5 mA
I
GD
= 1.5 mA
0.7
12
12
375
42
465
750
400
1
1.0
16
16
15
1.3
550
mA
mA
mS
渭A
V
V
V
38
1.2
40
dBm
1.5
dB
Symbol
P
1dB
SSG
PAE
Test Conditions
V
DS
= 5.0V; I
DS
= 50% I
DSS
V
DS
= 5.0V; I
DS
= 50% I
DSS
V
DS
= 5.0V; I
DS
= 50% I
DSS
Min
26.0
15.5
Typ
27.5
17
50
Max
Units
dBm
dB
%
RF SPECIFICATIONS MEASURED AT
f
= 1850 MHz USING CW SIGNAL
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://www.filtronic.co.uk/semis
Revised11/11/05
Email:
sales@filcsi.com

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