鈥?/div>
Narrowband and broadband high-
performance amplifiers
SATCOM uplink transmitters
PCS/Cellular low-voltage high-efficiency
output amplifiers
Medium-haul digital radio transmitters
E
LECTRICAL
S
PECIFICATIONS
1
:
P
ARAMETER
Power at 1dB Gain Compression
Maximum Stable Gain (S21/S12)
Power Gain at P1dB
Power-Added Efficiency
Output Third-Order Intercept Point
IP3
(from 15 to 5 dB below P1dB)
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
胃JC
Matched for optimal power; Tuned for best IP3
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS
鈮?/div>
+1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 1 mA
IGS = 1 mA
IGD = 1 mA
VDS > 6V
12.0
14.5
260
41
325
520
280
15
1.0
14.0
16.0
45
385
dBm
mA
mA
mS
碌A
V
V
V
擄C/W
S
YMBOL
P1dB
MSG
G1dB
PAE
C
ONDITIONS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS; POUT = P1dB
VDS = 8V; IDS = 50% IDSS
M
IN
27.5
T
YP
28.5
14.0
M
AX
U
NITS
dBm
dB
dB
%
10.0
11.0
45
39
Note:
1
T
Ambient
= 22擄C; RF specifications measured at
f
= 12 GHz using CW signal
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
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