鈥?/div>
DESCRIPTION AND APPLICATIONS
DIE SIZE (碌m): 650 x 800
DIE THICKNESS: 75碌m
BONDING PADS (碌m):
>70
x 65
The FPD1000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The
FPD1000V includes Source plated thru-vias, and does not require wire bonds to the Source.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
鈥?/div>
ELECTRICAL SPECIFICATIONS AT 22擄C
Parameter
Power at 1dB Gain Compression
Power Gain at dB Gain Compression
Maximum Stable Gain
S
21
/S
12
Power-Added Efficiency
at 1dB Gain Compression
3
rd
-Order Intermodulation Distortion
螕
S
and
螕
L
tuned for Optimum IP3
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity
I
DSS
I
MAX
G
M
I
GSO
|V
P
|
|V
BDGS
|
|V
BDGD
|
螛
CC
IM3
PAE
Symbol
P
1dB
G
1dB
MSG
Test Conditions
V
DS
= 10V; I
DS
= 200 mA
螕
S
and
螕
L
tuned for Optimum IP3
V
DS
= 10V; I
DS
= 200 mA
螕
S
and
螕
L
tuned for Optimum IP3
V
DS
= 10 V; I
DS
= 200mA
P
IN
= 0dBm, 50鈩?system
V
DS
= 10V; I
DS
= 200 mA
螕
S
and
螕
L
tuned for Optimum IP3
V
DS
= 10V; I
DS
= 200 mA
P
OUT
= 19 dBm (single-tone level)
V
DS
= 1.3 V; V
GS
= 0 V
V
DS
= 1.3 V; V
GS
鈮?/div>
+1 V
V
DS
= 1.3 V; V
GS
= 0 V
V
GS
= -3 V
V
DS
= 1.3 V; I
DS
= 2.4 mA
I
GS
= 2.4 mA
I
GD
= 2.4 mA
See Note on following page
0.7
6
20
480
-46
650
1100
720
20
0.9
8
22
22
50
1.4
-44
720
dBc
mA
mA
mS
碌A(chǔ)
V
V
V
擄C/W
50
%
20
dB
14.5
16.0
Min
30
Typ
31
Max
Units
dBm
RF SPECIFICATIONS MEASURED AT
f
= 1.85 GHz USING CW SIGNAL
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://www.filtronic.co.uk/semis
Revised:
4/29/05
Email:
sales@filcsi.com
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