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FPD1000AS-EB Datasheet

  • FPD1000AS-EB

  • 1W PACKAGED POWER PHEMT

  • 592.85KB

  • 11頁(yè)

  • FILTRONIC

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FPD1000AS
1W P
ACKAGED
P
OWER P
HEMT
F
EATURES
:
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
31 dBm Output Power (P1dB) @1.8GHz
15 dB Power Gain (G1dB) @ 1.8GHz
43 dBm Output IP3
-42 dBc WCDMA ACPR at 21 dBm PCH
10V Operation
50% Power-Added Efficiency
Evaluation Boards Available
Suitable for applications to 5 GHz
Datasheet v3.0
P
ACKAGE
T
YPICAL
A
PPLICATIONS
:
G
ENERAL
D
ESCRIPTION
:
The FPD1000AS is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron
Mobility
Transistor
(pHEMT),
optimized for power applications in L-Band.
The surface-mount package has been
optimized for low parasitics.
鈥?/div>
鈥?/div>
Drivers or output stages in PCS/Cellular
base station transmitter amplifiers
Power applications in WLL/WLAN and
WiMax amplifiers
E
LECTRICAL
S
PECIFICATIONS
:
P
ARAMETER
Power at 1dB Gain Compression
P1dB
S
YMBOL
C
ONDITIONS
VDS = 10V; IDS = 200 mA
螕S
and
螕L
tuned for Optimum IP3
VDS = 10V; IDS = 200 mA
M
IN
30
T
YP
31
M
AX
U
NITS
dBm
Power Gain at 1dB Gain Compression
G1dB
螕S
and
螕L
tuned for Optimum IP3
VDS = 10 V; IDS = 200mA
13.5
15.0
Maximum Stable Gain
MSG
S21/S12
Power-Added Efficiency
PAE
at 1dB Gain Compression
3rd-Order Intermodulation Distortion
螕S
and
螕L
tuned for Optimum IP3
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistance (channel-to-case)
IM3
20
PIN = 0dBm, 50鈩?system
VDS = 10V; IDS = 200 mA
螕S
and
螕L
tuned for Optimum IP3
VDS = 10V; IDS = 200 mA
-46
POUT = 19 dBm (single-tone level)
50
dB
%
dBc
480
650
1100
720
20
0.7
6
20
25
0.9
50
1.4
800
mA
mA
mS
碌A(chǔ)
V
V
V
擄C/W
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS
鈮?/div>
+1 V
VDS = 1.3 V; VGS = 0 V
VGS = -3 V
VDS = 1.3 V; IDS = 2.4 mA
IGS = 2.4 mA
IGD = 2.4 mA
See Note on following page
螛
CC
Note: T
AMBIENT
= 22擄; RF specification measured at f = 1850 MHz using CW signal (except as noted)
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com

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