鈥?/div>
The FPD10000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for WiMAX (WMAN) IEEE 802.16 power amplifiers.
The device can be biased from Class C (I
DQ
< 200 mA), to Class A (I
DQ
= 1.0 鈥?1.5 A) to deliver
optimal linear power over the desired output power range. The FPD10000V is also available in
packaged form.
鈥?/div>
ELECTRICAL SPECIFICATIONS AT 22擄C
Parameter
Power at 1dB Gain Compression
CW Single Tone
Power Gain at dB Gain Compression
CW Single Tone
Channel Power with 802.16-2004
2.5% max. EVM
Channel Power with 802.16-2004
2.5% max. EVM
Power-Added Efficiency
802.16-2004 modulation
Saturated Drain-Source Current
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity
I
DSS
I
GSO
|V
P
|
|V
BDGD
|
螛
CC
P
CH
P
CH
Eff
G
1dB
Symbol
P
1dB
Test Conditions
V
DS
= 10V; I
DQ
= 1.0 A
螕
S
and
螕
L
tuned for Optimum IP3
V
DS
= 10V; I
DQ
= 1.0 A
Class AB Mode
Class AB Mode
V
DS
= 10 V; I
DQ
= 1.0 A
Class B Mode
V
DS
= 8 V; I
DQ
= 350 mA typ.
Class AB Mode
Class B Mode
V
DS
= 1.3 V; V
GS
= 0 V
V
GS
= -3 V
V
DS
= 1.3 V; I
DS
= 19 mA
I
GD
= 19 mA
See Note on following page
30
10
20
5.2
3
1.1
35
3.5
A
mA
V
V
擄C/W
%
29.5
30
dBm
31.0
31.5
dBm
9.5
dB
Min
Typ
39.5
Max
Units
dBm
RF SPECIFICATIONS MEASURED AT
f
= 3.5 GHz
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http:/www.filtronic.co.uk/semis
Revised:
8/5/05
Email:
sales@filcsi.com
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