鈥?/div>
The FPD10000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flange-
mount package has been optimized for low electrical parasitics and optimal heatsinking.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
鈥?/div>
ELECTRICAL SPECIFICATIONS AT 22擄C
Parameter
Power at 1dB Gain Compression
Class B Operation
Power Gain at dB Gain Compression
Maximum Stable Gain: S
21
/S
12
P
IN
= 0dBm, 50鈩?system
Power-Added Efficiency
at 1dB Gain Compression
Adjacent Channel Power Ratio
WCDMA BTS Forward (64 channels)
10.15 dB Pk/Avg 0.001%
Saturated Drain-Source Current
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (channel-to-case)
I
DSS
I
GSO
|V
P
|
|V
BDGD
|
螛
CC
V
DS
= 3.0 V; V
GS
= 0 V
V
GS
= -3 V
V
DS
= 3.0 V; I
DS
= 19 mA
I
GD
= 19 mA
See Note on following page
30
5.2
3
1.1
35
3.5
A
mA
V
V
擄C/W
ACPR
PAE
G
1dB
MSG
V
DS
= 12V; I
DQ
= 180 mA
V
DS
= 12V; I
DQ
= 300 mA
V
DS
= 12 V; I
DQ
= 180 mA
V
DS
= 12 V; I
DQ
= 300 mA
V
DS
= 12V; I
DQ
= 180 mA
I
RF
(drive-up current) ~ 1.5A
V
DS
= 12V; I
DQ
= 180 mA
Channel power = 30 dBm
-44
dBc
10
11
16.5
18.0
55
%
dB
dB
Symbol
P
1dB
Test Conditions
V
DS
= 12V; I
DQ
= 180 mA
Min
Typ
40
Max
Units
dBm
RF SPECIFICATIONS MEASURED AT
f
= 1.8 GHz USING CW SIGNAL
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://www.filtronic.co.uk/semis
Revised:
12/07/04
Email:
sales@filcsi.com
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