Ordering number:EN5263
FP502
N-Channel Silicon MOSFET
Silicon Schottky Barrier Diode
DC-DC Converter Applications
Features
路 Composite type with a high-speed N-channel
MOSFET and a low-forward voltage Schottky
barrier diode contained in the PCP4 package, saving
the mount space greatly.
Package Dimensions
unit:mm
2132
[FP502]
1:Source, Anode
2:Common (Drain,
Cathode)
3:Source, Anode
4Common (Drain,
Cathode)
5:Gate
6:Common (Drain,
Cathode)
7:Common (Drain,
Cathode)
SANYO:PCP4
(Bottom view)
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Allowable Power Dissipation
Storage Temperature
[MOS block]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Channel Temperature
[Diode block]
Average Rectified Current
IO
500
mA
VDSS
VGSS
ID
IDP
Tch
PW鈮?0碌s, duty cycle
鈮?%
11
鹵10
2
8
150
V
V
A
A
藲C
Symbol
PD
PD
Tstg
Tc=25藲C, 1 unit
Mounted on ceramic board (250mm
脳0.8mm)
1 unit
2
Conditions
Ratings
3.5
1.5
鈥?5 to +150
Unit
W
W
藲C
Electrical Characteristics
at Ta=25藲C
Parameter
[MOS block]
D-S Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
IDSS
IGSS
VGS(off)
| Yfs |
RDS(on)
RDS(on)
Ciss
Coss
Crss
ID=1mA, VGS=0
VDS=10.4V, VGS=0
VGS=鹵8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=10V
ID=500mA, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1NHZ
VDS=10V, f=1MHz
11
400
鹵10
1.0
1.2
2.2
140
200
150
200
45
200
320
4.0
V
碌A
碌A
V
S
m鈩?/div>
m鈩?/div>
pF
pF
pF
Symbol
Conditons
Ratings
min
typ
max
Unit
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA(KT) 71096YK (KOTO) TA-0623 No.5263-1/4
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