Ordering number:EN4632
FP401
N-Channel MOS Silicon FET
Very High-Speed
Switching Applications
Features
路 Low ON resistance.
路 Very high-speed switching.
路 Composite type with 2 low-voltage-drive N-channel
MOSFETs facilitating high-density mounting.
Electrical Connection
1:Gate
2:Drain
3:Source
4:Drain
5:Gate
6:Drain
7:Drain
(Top view)
1:Gate
2:Drain
3:Source
4:Drain
5:Gate
6:Drain
7:Drain
SANYO:PCP5
(Bottom view)
Package Dimensions
unit:mm
2102A
[FP401]
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PD
PT
Tch
Tstg
PW鈮?0碌s, duty cycle
鈮?%
Tc=25藲C, 1 unit
Mounted on ceramic board (250mm
脳0.8mm)
1 unit
2
2
Conditions
Ratings
250
鹵20
400
1.6
2.0
0.8
1.1
150
鈥?5 to +150
Unit
V
V
mA
A
W
W
W
藲C
藲C
Mounted on ceramic board (250mm
脳0.8mm)
Electrical Characteristics
at Ta=25藲C
Parameter
D-S Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| Yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
ID=1mA, VGS=0
VDS=250V, VGS=0
VGS=鹵18V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=200mA
ID=200mA, VGS=10V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=400mA, VGS=0
1.5
270
400
8
37
10
4
10
10
35
45
1.0
12
Conditons
Ratings
min
250
100
鹵10
2.5
typ
max
Unit
V
碌A(chǔ)
碌A(chǔ)
V
mS
鈩?/div>
pF
pF
pF
ns
ns
ns
ns
V
Marking:401
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/82494MT (KOTO) BX-0301 No.4632-1/3
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