Ordering number:EN4726
FP302
TR:NPN Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Features
路 Composite type with NPN transistor and Schottoky
barrier diode facilitating high-density mounting.
路 The FP302 is composed of chips equivalent to the
2SC4520 and SB05-05CP, which are placed in one
package.
Package Dimensions
unit:mm
2099A
[FP302]
1:Base
2:Collector
3:Emitter Common
4:Cathode
5:Anode
6:Cathode
7:Collector
SANYO:PCP5
(Bottom view)
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1 cycle
50
55
500
5
鈥?5 to +125
鈥?5 to +125
V
V
mA
A
藲C
藲C
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Mounted on ceramic board (250mm
脳0.8mm)
2
Symbol
Conditions
Ratings
60
45
5
1.5
3
300
0.8
150
鈥?5 to +150
Unit
V
V
V
A
A
mA
W
藲C
藲C
Electrical Connection
1:Base
2:Collector
3:Emitter Common
4:Cathode
5:Anode
6:Cathode
7:Collector
(Top view)
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/N2394TS (KOTO) BX-0370 No.4726-1/4
1
2
3
4
