Ordering number:EN4539
FP301
TR:NPN Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Features
路 Composite type with 2 devices (NPN transistor and
Schottoky barrier diode) contained in one package,
facilitating high-density mounting.
路 The FP301 is formed with a chip being equivalent to
the 2SD1621 and a chip being equivalent to the
SB07-03C placed in one package.
Package Dimensions
unit:mm
2099A
[FP301]
1:Base
2, 7:Collector
3:Emitter Common
4, 6:Collector
5:Base
SANYO:PCP5
(Bottom view)
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1 cycle
30
35
700
5
鈥?5 to +125
鈥?5 to +125
V
V
mA
A
藲C
藲C
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Mounted on ceramic board (250mm
脳0.8mm)
2
Symbol
Conditions
Ratings
30
25
6
2
5
400
0.8
150
Unit
V
V
V
A
A
mA
W
藲C
Electrical Connection
1:Base
2, 7:Collector
3:Emitter Common
4, 6:Collector
5:Base
(Top view)
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/53094TH (KOTO) BX-0215 No.4539-1/4
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