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FP2189-PCB1900S Datasheet

  • FP2189-PCB1900S

  • high performance 1-Watt HFET (Heterostructure FET) in a low...

  • 432.06KB

  • 6頁

  • ETC

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FP2189
1 Watt HFET
The Communications Edge
TM
Preliminary Product Information
Product Features
鈥?/div>
50 鈥?4000 MHz
鈥?/div>
Up to +31 dBm P1dB
鈥?/div>
Up to +45 dBm Output IP3
鈥?/div>
High Drain Efficiency
鈥?/div>
19 dB Gain @ 900 MHz
鈥?/div>
MTBF >100 Years
鈥?/div>
SOT-89 SMT Package
Product Description
The FP2189 is a high performance 1-Watt HFET
(Heterostructure FET) in a low-cost SOT-89 surface-
mount package. This device works optimally at a drain
bias of +8 V and 250 mA to achieve +45 dBm output
IP3 performance and an output power of +31 dBm at
1-dB compression.
The device conforms to WJ Communications鈥?long
history of producing high reliability and quality
components. The FP2189 has an associated MTBF of
greater than 100 years at a mounting temperature of
85擄C. All devices are 100% RF & DC tested.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high performance and high
efficiency are required.
Functional Diagram
4
1
2
3
Pin No.
1
2
3
4
Function
Input
Ground
Output/Bias
Ground
Specifications
DC Electrical Parameter
Saturated Drain Current
1
, I
dss
Transconductance, G
m
Pinch Off Voltage
2
, V
p
Typical Parameters
5
Units
mA
mS
V
Min
Typ
500
350
-2.0
Max
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
V
dd
I
dq6
I
dd
at P1dB
5.
6.
Units
MHz
dB
dB
dB
dBm
dBm
dB
V
mA
mA
915
19.1
-17
-10
+30.3
+44.3
4.2
+8
250
260
Typical
1960
15.2
-16
-8
+30.8
+44.2
3.5
+8
250
330
2140
13.8
-23
-9
+31.4
+45.5
4.5
+8
250
320
Parameters
3
Frequency Range
Small Signal Gain, Gss
Output P1dB
Output IP3
4
Thermal Resistance
Units
MHz
dB
dBm
dBm
擄C/W
Min
50
Typ
15
+31
+45
Max
4000
30
1. I
dss
is measured with V
gs
= 0 V, V
ds
= 3 V.
2. Pinch-off voltage is measured when I
ds
= 0.4 mA.
3. Test conditions unless otherwise noted: T = 25潞C, V
DS
= 8 V, I
DQ
= 250 mA, frequency = 900 MHz
in an application circuit with Z
L
= Z
LOPT
, Z
S
= Z
SOPT
.
4. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Typical parameters represent performance in an application circuit.
I
dq
is the quiescent drain current at small signal output levels. The
current may increase as the output power is increased near its
compression point.
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Maximum DC Power
RF Input Power (continuous)
Ordering Information
Part No.
FP2189
FP2189-PCB900S
FP2189-PCB1900S
FP2189-PCB2140S
Rating
-40 to +85
擄C
-40 to +125
擄C
4.0 W
+20 dBm
Description
1-Watt HFET
(Available in Tape & Reel)
Operation of this device above any of there parameters may cause permanent damage
900 MHz Application Circuit
1900 MHz Application Circuit
2140 MHz Application Circuit
This document contains information on a new product.
Specifications and information are subject to change without notice
WJ Communications, Inc
鈥?/div>
Phone 1-800-WJ1-4401
鈥?/div>
FAX: 408-577-6620
鈥?/div>
e-mail: sales@wj.com
鈥?/div>
Web site: www.wj.com
May 2002

FP2189-PCB1900S 產(chǎn)品屬性

  • TriQuint

  • 射頻開發(fā)工具

  • Evaluation Boards

  • RF HFET

  • FP2189-G

  • 1.93 GHz to 1.99 GHz

  • 8 V

  • FP2189

  • Bulk

  • 1

  • 1067248

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