Ordering number:EN4698
FP215
PNP Epitaxial Planar Silicon Composite Transistors
High-Frequency Amp,
Differential Amp Applications
Features
路 Composite type with 2 transistors contained in the
PCP package currently in use, improving the mount-
ing efficiency greatly.
路 The FP215 is formed with two chips, being equiva-
lent to the 2SA1724, placed in one package.
路 Excellent in thermal equilibrium and pair capability.
Electrical Connection
1:Base (PNP TR)
2:Collector (PNP TR)
3:Emitter Common
4:Collector (PNP TR)
5:Base (PNP TR)
6:Collector (PNP TR)
7:Collector (PNP TR)
(Top view)
Package Dimensions
unit:mm
2108A
[FP215]
1:Base (PNP TR)
2:Collector (PNP TR)
3:Emitter Common
4:Collector (PNP TR)
5:Base (PNP TR)
6:Collector (PNP TR)
7:Collector (PNP TR)
SANYO:PCP5
(Bottom view)
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
PT
Tj
Tstg
Mounted on ceramic board (250mm
脳0.8mm)
1 unit
2
2
Conditions
Ratings
鈥?0
鈥?0
鈥?
鈥?00
鈥?00
0.75
1.0
150
鈥?5 to +150
Unit
V
V
V
mA
mA
W
W
藲C
藲C
Mounted on ceramic board (250mm
脳0.8mm)
Electrical Characteristics
at Ta=25藲C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
Base-to-Emitter Voltage Difference
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
Symbol
ICBO
IEBO
hFE1
hFE2
hFE1
(small-large)
VBE
(large-small)
fT
Cob
Cre
VCE(sat)
VBE(sat)
VCB=鈥?0V, IE=0
VEB=鈥?V, IC=0
VCE=鈥?V, IC=鈥?0mA
VCE=鈥?V, IC=鈥?000mA
VCE=鈥?V, IC=鈥?0mA
VCE=鈥?V, IC=鈥?00mA
VCE=鈥?V, IC=鈥?0mA
VCB=鈥?0V, f=1MHz
VCB=鈥?0V, f=1MHz
IC=鈥?00mA,
IC=鈥?00mA,
IB=鈥?0mA
IB=鈥?0mA
15
5
0.6
0.93
3.0
1.5
4.9
4.4
鈥?.4
鈥?.9
鈥?.0
鈥?.2
25
mV
GHz
pF
pF
V
V
Conditons
Ratings
min
typ
max
鈥?.1
鈥?.0
100
Unit
碌A
碌A
Note:The specifications shown above are for individual transistor.
However, the DC Current Gain Ratio and Base-to-Emitter Voltage Difference are for the paired transistors.
Marking:215
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/41594HO (KOTO) BX-0352 No.4698-1/3
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