Ordering number:EN4536
FP209
NPN Epitaxial Planar Silicon Transistor
Driver Applications
Features
路 Composite type with 2 transistors (NPN) contained
in one package, facilitating high-density mounting.
路 The FP209 is formed with 2 chips being equivalent
to the 2SD1621, placed in one package.
Electrical Connection
1:Base (NPN TR)
2, 7:Collector (NPN TR)
3:Emitter Common
4, 6:Collector (NPN TR)
5:Base (NPN TR)
(Top view)
SANYO:PCP5
(Bottom view)
1:Base (NPN TR)
2, 7:Collector (NPN TR)
3:Emitter Common
4, 6:Collector (NPN TR)
5:Base (NPN TR)
Package Dimensions
unit:mm
2097A
[FP209]
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
Mounted on ceramic board (250mm
2
脳0.8mm)
1unit
Mounted on ceramic board (250mm
脳0.8mm)
2
Conditions
Ratings
30
25
6
2
5
400
0.8
1.1
150
鈥?5 to +150
Unit
V
V
V
A
A
mA
W
W
藲C
藲C
Electrical Characteristics
at Ta=25藲C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
VCB=20V, IE=0
VEB=4V, IC=0
VCE=2V, IC=100mA
VCE=10V, IC=50mA
VCB=10V, f=1MHz
IC=1.5A, IB=75mA
IC=1.5A, IB=75mA
30
25
6
60
500
25
140
150
19
0.18
0.85
0.4
1.2
Conditons
Ratings
min
typ
max
100
100
400
MHz
pF
V
V
V
V
V
ns
ns
ns
Unit
nA
nA
V(BR)CBO IC=10碌A, IE=0
V(BR)CEO IC=1mA, RBE=鈭?/div>
V(BR)EBO
ton
tstg
tf
IE=10碌A, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Marking:209
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/53094TH (KOTO) BX-0215 No.4536-1/3
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