鈥?/div>
DESCRIPTION AND APPLICATIONS
The FP1510SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a
0.10
碌m
x 1500
碌m
Schottky barrier gate, defined by electron-beam photolithography. The recessed
鈥渕ushroom鈥?gate structure minimizes parasitic gate-source and gate resistance. The epitaxial
structure and processing have been optimized for reliable high-power applications. The FP1510 also
features Si3N4 passivation and is available in die form or in other packages.
Typical applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN
systems, and other types of wireless infrastructure systems.
鈥?/div>
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25擄C
Parameter
Saturated Drain-Source Current
LP1510SOT89-1
LP1510SOT89-2
LP1510SOT89-3
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Noise Figure
Output Third-Order Intercept Point
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
frequency=1.8 GHz
P-1dB
G-1dB
PAE
NF
IP3
I
MAX
G
M
I
GSO
V
P
|V
BDGS
|
|V
BDGD
|
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
;
P
IN
= 15 dBm
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5V; I
DS
= 50% I
DSS
;
P
IN
= -1 dBm
V
DS
= 2 V; V
GS
= 1 V
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 2 V; I
DS
= 8 mA
I
GS
= 8 mA
I
GD
= 8 mA
-0.25
10
10
300
Symbol
I
DSS
Test Conditions
V
DS
= 2 V; V
GS
= 0 V
375
451
527
26.5
17
420
490
560
28
19
50
1.0
45
925
400
10
-1.2
12
13
100
-2.0
450
526
600
mA
mA
mA
dBm
dB
%
dB
dBm
mA
mS
碌A(chǔ)
V
V
V
Min
Typ
Max
Units
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
2/26/02
Email:
sales@filss.com
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