Ordering number:EN5100
FP108
TR:PNP Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Features
路 Composite type with a PNP transistor and a Shottky
barrier diode contained in one package, facilitating
high-density mounting.
路 The FP108 is formed with 2 chips, one being
equivalent to the 2SB1121 and the other the SB01-
015CP, placed in one package.
Package Dimensions
unit:mm
2088A
[FP108]
1:Base
2:Common
3:Emitter
4:Common
5:Anode
6:Common
7:Common
(Common:Collcector,
Cathode)
SANYO:PCP4
(Bottom view)
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1cycle
15
17
1
8
鈥?5 to +125
鈥?5 to +125
V
V
A
A
藲C
藲C
VCBO
VCEO
VEBO
IC
I CP
IB
PC
Tj
Tstg
Mounted on ceramic board (250mm
脳0.8mm)
2
Symbol
Conditions
Ratings
鈥?0
鈥?5
鈥?
鈥?
鈥?
鈥?00
1.3
150
鈥?5 to +150
Unit
V
V
V
A
A
mA
W
藲C
藲C
Marking:108
Electrical Connection
1:Base
2:Common
3:Emitter
4:Common
5:Anode
6:Common
7:Common
(Common:Collcector,
Cathode)
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/63095MO (KOTO) TA-0316 No.5100-1/4
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