Power Transistor FN812
Absolute Maximum Ratings
(Ta=25潞C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
Tstg
Ratings
120
100
6
8 (pulse 12)
3
35 (Tc=25潞C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
潞C
潞C
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
CEO
h
FE
V
CE
(sat)
Test Conditions
V
CB
= 120V
V
EB
= 6V
I
C
= 50mA
V
CE
= 4V, I
C
= 3A
I
C
= 4A, I
B
= 0.4A
Ratings
10max
10max
100min
70min
0.3max
4
(Ta=25潞C)
Unit
碌A(chǔ)
碌A(chǔ)
V
V
External Dimensions
FM20 (full-mold)
10.0
4.2
2.8
3.3
C0.5
8.4
a
b
16.9
V
CC
(V)
12
R
L
(鈩?
4
I
C
(A)
3
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(mA)
30
I
B2
(mA)
鈥?0
t
on
(碌s)
1.0
t
stg
(碌s)
2.0
t
f
(碌s)
0.5
2.54
2.2
1.35
1.35
0.85
2.54
3.9
Typical Switching Characteristics
0.8
2.6
(13.5)
0.45
B C E
a) Type No.
b) Lot No.
(Unit: mm)
s
I
C
鈥?V
CE
Characteristics (typ.)
300m
A
20
0m
A
8
s
V
CE
(sat) 鈥?I
B
Characteristics (typ.)
2
s
I
C
鈥?V
BE
Temperature Characteristics (typ.)
8
1
m
50
A
A
A
0m
75m
10
A
50m
6
6
V
CE
(sat)
(V)
I
C
(A)
25mA
4
I
C
(A)
1
Ic = 3A
Ic = 5A
Ic = 1A
4
2
I
B
= 10mA
2
Tc = 鈥?5潞C
25潞C
75潞C
125潞C
0
0
1
2
3
4
0
5
10
50 100
500 1000 2000
0
0
0.5
1.0
1.5
V
CE
(V)
I
B
(mA)
V
BE
(V)
s
h
FE
鈥?I
C
Characteristics (typ.)
500
(V
CE
= 4V)
s
h
FE
鈥?I
C
Temperature Characteristics (typ.)
500
Tc = 125潞C
(V
CE
= 4V)
s
j-a
鈥?t
Characteristics
C)
5潞
=2
(Ta
Ta = 25潞C
50
(潞C/
W
)
Typ
j-a
100
50
30
0.01
0.05 0.1
0.5
1
5
8
100
50
30
0.01
75潞C
25潞C
鈥?5潞C
10
5
1
0.5
h
FE
h
FE
NO
FIN
Single Pulese
0.1
0.05
0.0002 0.001
0.05 0.1
0.5
1
5 8
0.01
0.1
1
10
100
I
C
(A)
I
C
(A)
t (sec)
s
f
T
鈥?I
E
Characteristics (typ.)
30
Typ
(V
CE
= 12V)
s
Safe Operating Area (single pulse)
20
se
1m
s
P
C
鈥?Ta Derating
40
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
10
10
c
5
20
30
ith
W
10
0m
D.
C
(T
ms
ec
c
se
f
T
(
MHz
)
P
C
(W)
c
I
C
(A)
1
0.5
=2
5潞
C)
ite
fin
in
20
20
0鈥?/div>
20
0鈥?/div>
nk
si
at
he
10
2
10
100
鈥?10
0鈥?
Without heatsink
0
鈥?.01
鈥?.05 鈥?.1
鈥?.5 鈥?
鈥? 鈥?0
0.1
3
5
10
50
100
200
0
0
50
100
150
I
E
(A)
V
CE
(V)
Ta (潞C)
60
1
