Transistors
EMX4 / UMW6N / UMW10N / UMX4N /
FMW6 / FMW10 / IMX4
High transition frequency (dual transistors)
EMX4 / UMW6N / UMW10N / UMX4N /
FMW6 / FMW10 / IMX4
!
Features
1) Two 2SC3837K chips in a EMT or UMT or SMT package.
2) High transition frequency. (f
T
=1.5GHz)
3) Low output capacitance. (Cob=0.95pF)
!
Equivalent circuit
EMX4 / UMX4N
(3)
(2)
(1)
IMX4
(4)
(5)
(6)
UMW6N
(3)
(2)
(1)
FMW6
(3)
(4)
(5)
UMW10
(3)
(2)
(1)
FMW10
(3)
(4)
(5)
(4)
(5)
(6)
(3)
(2)
(1)
(4)
(5)
(2)
(1)
(4)
(5)
(2)
(1)
!
Absolute maximum ratings
(Ta = 25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
EMX4 / UMW6N / UMW10N / UMX4N
FMW6 / FMW10 / IMX4
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
30
18
3
50
150(TOTAL)
300(TOTAL)
150
鈭?5
~
+150
Unit
V
V
V
mA
mW
鈭?
鈭?
Junction temperature
Storage temperature
鈭?
120mW per element must not be exceeded.
鈭?
200mW per element must not be exceeded.
擄C
擄C
!
Electrical characteristics
(Ta = 25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
h
FE
pairing
Transition frequency
Output capacitance
鈭桾ransition
frequency of the device.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
h
FE1 /
h
FE2
f
T
Cob
Min.
30
18
3
鈭?/div>
鈭?/div>
27
鈭?/div>
0.5
600
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
1
1500
0.95
Max.
鈭?/div>
鈭?/div>
鈭?/div>
0.5
0.5
270
0.5
2
鈭?/div>
1.6
Unit
V
V
V
碌A
碌A
鈭?/div>
V
鈭?/div>
MHz
pF
I
C
=10碌A
I
C
=1mA
I
E
=10碌A
V
CB
=10V
V
EB
=2V
Conditions
V
CE
/I
C
=10V/10mA
I
C
/I
B
=20mA/4mA
V
CE
/I
C
=10V/10mA
V
CE
/I
C
=10V/10mA,
f=200MHz
V
CB
/f=10V/1MHz, I
E
=0A
鈭?/div>
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