鈾?/div>
3x3x0.9mm Packaged pHEMT Switch
Suitable for L, S, and C-band digital
cellular, cordless telephony and WLAN
applications
High isolation, 25dB typ at 2.5GHz
Low insertion loss, 0.5dB typ at 2.5GHz
Low insertion loss, 1.0dB typ at 6GHz
P0.1dB > 38dBm at 2GHz
Functional Schematic
ANT
V1
V2
RF1
RF2
Description and Applications:
The FMS2020QFN is a low loss, high power and linear single pole dual throw Gallium Arsenide antenna
switch. The die is fabricated using the Filtronic FL05 0.5碌m switch process technology, which offers leading
edge performance optimised for switch applications. The FMS2020QFN is designed for use in L, S, and C
band wireless applications and WLAN access points where high linearity switching is required.
Electrical Specifications:
Parameter
(T
AMBIENT
= 25擄C,V
ctrl
= 0V/2.5V, Z
IN
= Z
OUT
= 50鈩?
Test Conditions
0.5 鈥?1.0 GHz
1.0 鈥?2.0 GHz
Min
Typ
0.4
0.45
0.55
0.65
0.75
0.95
23
18
30
25
18
>38
>38
>37
>33
<-70
<-70
<0.3
<1.0
<10
Max
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBc
dBc
碌s
碌s
碌A(chǔ)
Insertion Loss
2.0 鈥?3.0 GHz
3.0 鈥?4.0 GHz
4.0 鈥?5.0 GHz
5.0 鈥?.0 GHz
Return Loss
0.5 鈥?2.5 GHz
2.5 鈥?5.0 GHz
0.5 鈥?1.0 GHz
1.0 鈥?2.5 GHz
2.5 鈥?6.0 GHz
1.0 GHz
Isolation
Input power at 0.1dB compression point
2.0 GHz
2.5 GHz
6.0 GHz
2nd Harmonic Level
3rd Harmonic Level
Switching speed : T rise, T fall
T on, T off
Control Current
1 GHz, Pin = +35 dBm, 100% Duty Cycle
1 GHz, Pin = +35 dBm, 100% Duty Cycle
10% to 90% RF and 90% to 10% RF
50% control to 90% RF and 50% control to 10% RF
+35dBm RF input @1GHz
Note:
External DC blocking capacitors are required on all RF ports (typ: 100pF)
All unused ports terminated in 50鈩?
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850-5790
Fax: +1 (408) 850-5766
Email:
sales@filcsi.com
Website: www.filtronic.co.uk/semis
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