鈾?/div>
Available in die form
Suitable for multi-band GSM/DCS/PCS/
EDGE and UMTS applications
Excellent low control voltage performance
Excellent harmonic performance under
GSM/DCS/PCS power levels
Very high Tx-Rx isolation >35dB typ. at
1.8GHz
Very high Tx-Tx isolation >30dB typ. at
1.8GHz
Very low Tx Insertion loss
Very low control current
RX1
Functional Schematic
RX2
RX3
RX4
TX2
VTX2
TX1
VTX1
TX3
VTX3
VRX1
VRX2
VRX3
VRX4
ANT
VRXC
Description and Applications:
The FMS2018 is a low loss, high power and linear single pole seven throw Gallium Arsenide antenna
switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05
0.5碌m switch process technology which offers leading edge performance optimised for switch
applications. The FMS2018 is designed for use in dual/tri and quad-band GSM handset antenna
switch modules and RF front-end modules.
Electrical Specifications:
Parameter
Tx Insertion Loss
(T
AMBIENT
= 25擄C,V
control
= 0V/2.5V, Z
IN
= Z
OUT
= 50鈩?
Test Conditions
0.5 鈥?1.0 GHz
1.0 鈥?2.0 GHz
Min
Typ
0.5
0.6
0.6
0.8
20
40
35
33
30
-75
-75
-75
-75
< 0.3
< 1.0
Max
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBc
dBc
dBc
dBc
碌s
碌s
Rx Insertion Loss
0.5 鈥?1.0 GHz
1.0 鈥?2.0 GHz
Return Loss
Isolation
TX-RX
Isolation
TX-TX
2nd Harmonic Level
0.5 鈥?2.5 GHz
0.5 鈥?1.0 GHz
1.0 鈥?2.0 GHz
0.5 鈥?1.0 GHz
1.0 鈥?2.0 GHz
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +33 dBm, 100% Duty Cycle
3rd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +33 dBm, 100% Duty Cycle
Switching speed : Trise, Tfall
Ton, Toff
10% to 90% RF and 90% to 10% RF
50% control to 90% RF and 50% control to 10% RF
Note:
External DC blocking capacitors are required on all RF ports (typ: 100pF)
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Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790
Fax: +1 (408) 850 5766
Email:
sales@filss.com
Website: www.filcs.com
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