SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODE
ISSUE 4 鈥?JANUARY 1998
PIN CONFIGURATION
1
FMMV109
2
1
PARTMARKING DETAIL
FMMV109 鈥?4A
3
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
P
tot
T
j
:T
stg
VALUE
330
-55 to +150
UNIT
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Reverse Breakdown
Voltage
Reverse current
Series Inductance
Diode Capacitance
Temperature
Coefficient
Case Capacitance
SYMBOL
V
BR
MIN.
30
TYP.
MAX.
UNIT
V
CONDITIONS.
I
R
= 10碌A
V
R
= 25V
f=250MHz
I
R
L
S
T
CC
3.0
280
10
nA
nH
ppm/ 擄C V
R
= 3V, f=1MHz
C
C
0.1
pF
f=1MHz
TUNING CHARACTERISTICS (at T
amb
= 25擄C).
PARAMETER
Diode Capacitance
Capacitance Ratio
Figure of MERIT
SYMBOL
C
d
C
d
/ C
d
Q
MIN.
26
5.0
200
250
TYP.
MAX.
32
6.5
UNIT
pF
CONDITIONS.
V
R
= 3V, f=1MHz
V
R
= 3V/25V, f=1MHz
V
R
= 3V, f=50MHz
Spice parameter data is available upon request for this device
1
