SOT23 NPN SILICON PLANAR
RF TRANSISTOR
ISSUE 2 聳 NOVEMBER 1995
FEATURES
* High f
T
=650MHz
* Maximum capacitance 0.7pF
* Low noise < 5dB at 500MHz
FMMTH10
E
C
B
PARTMARKING DETAIL 聳
3EZ
SOT23
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
:T
stg
MAX.
UNIT
V
V
V
100
100
0.5
Typ.
0.45
0.65
0.95
60
650
0.7
9
Typ.
3
5
MHz
pF
ps
dB
nA
nA
V
pF
V
VALUE
30
25
3
25
50
330
-55 to +150
CONDITIONS.
I
C
=100
碌
A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10
碌
A, I
C
=0
V
CB
=25V, I
E
=0
V
EB
=2V,I
C
=0
I
C
=4mA, I
B
=0.4mA
V
CB
=10V, I
E
=0
f=1MHz
I
C
=4mA, V
CE
=10V
I
C
=4mA, V
CE
=10V*
I
C
=4mA, V
CE
=10V, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
I
C
=4mA, V
CB
=10V, f=31.8MHz
I
C
=2mA, V
CE
=5V
f=500MHz,
UNIT
V
V
V
mA
mA
mW
擄C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
MIN.
30
25
3
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C)
Collector-Emitter Saturation V
CE(sat)
Voltage
Common Base Feedback
Capacitance
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
C
rb
V
BE(on)
h
FE
f
T
Collector Base Capacitance C
cb
Collector Base Time Constant r
b
C
c
Noise Figure
N
f
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for this device
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