SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 2 聳 MARCH 1995
PARTMARKING DETAIL 聳
FMMTA20 聳 1C
FMMTA20R 聳 3C
FMMTA70
FMMTA20
E
C
B
COMPLEMENTARY TYPE 聳
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
VALUE
40
4
100
330
-55 to +150
SOT23
UNIT
V
V
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
PARAMETER
Collector-Base
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Static Forward
Current Transfer Ratio
Collector-Emitter
Saturation Voltage
Transition
Frequency
Output Capacitance
SYMBOL
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
V
CE(sat)
f
T
C
obo
125
4
40
MIN.
40
4
0.1
400
0.25
V
MHz
pF
MAX.
UNIT
V
V
碌
A
CONDITIONS.
I
C
=1mA, I
E
=0
I
E
=100mA, I
C
=0
V
CB
=30V, I
E
=0
I
C
=5mA, V
CE
=10V*
I
C
=10mA,I
B
=1mA
I
C
=5mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=140kHz, I
E
=0
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for this device
1
