SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 4 聳 JUNE 1996
FEATURES
* 80 Volt V
CEO
* Gain of 50 at I
C
=100mA
PARTMARKING DETAIL 聳
FMMTA05 聳 1H
FMMTA06 聳 1G
FMMTA05R 聳 NA
FMMTA06R 聳 MA
FMMTA05
FMMTA06
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
FMMTA05
60
60
4
500
330
-55 to +150
80
80
SOT23
FMMTA06
UNIT
V
V
V
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
PARAMETER
SYMBOL
FMMTA05
MIN.
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Cut-Off
Current
V
(BR)EBO
V
(BR)EBO
I
CES
I
CBO
50
50
0.25
1.2
100
100
60
4
0.1
0.1
50
50
0.25
1.2
V
V
MHz
MAX.
FMMTA06
MIN.
80
4
0.1
0.1
MAX.
V
V
碌
A
碌
A
碌
A
UNIT
CONDITIONS.
I
C
=1mA*
I
E
=100
碌
A
V
CES
=60V
V
CB
=60V
V
CB
=80V
I
C
=10mA, V
CE
=1V*
I
C
=100mA, V
CE
=1V*
I
C
=100mA, I
B
=10mA*
I
C
=100mA, V
CE
=1V*
I
C
=10mA, V
CE
f=100MHz
Static Forward
h
FE
Current Transfer Ratio
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Transition
Frequency
V
CE(sat)
V
BE(on)
f
T
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for this device
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