鈥淪UPER SOT鈥?/div>
SOT23 PNP SILICON
POWER DARLINGTON TRANSISTOR
ISSUE 1 鈥?AUGUST 1997
FEATURES
*
625mW POWER DISSIPATION
* Very High h
FE
at High Current (5A)
* Extremely Low V
CE(sat)
at High Current (1A)
COMPLEMENTARY TYPE 鈥?FMMT634
PARTMARKING DETAIL 鈥?734
FMMT734
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
-100
-100
-12
-5
-800
625
-55 to +150
SOT23
UNIT
V
V
V
A
mA
mW
擄C
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300碌s. Duty cycle
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