SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - NOVEMBER 1995
PARTMARKING DETAIL 聳 596
7
FMMT596
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
-220
-200
-5
-1
-0.3
-200
500
-55 to +150
MAX. UNIT CONDITIONS.
V
V
V
-100
-100
-100
-0.2
-0.35
-1.0
-0.9
100
100
85
35
150
10
nA
nA
nA
V
V
V
V
I
C
=-100
碌
A
I
C
=-10mA*
I
E
=-100
碌
A
V
CB
=-200V
V
EB
=-4V
V
CES
=-200V
I
C
=-100mA,I
B
=-10mA
I
C
=-250mA,
I
B
=-25mA*
I
C
=-250mA,I
B
=-25mA*
I
C
=-250mA,
V
CE
=-10V*
I
C
=-1mA, V
CE
=-10V
I
C
=-100mA,V
CE
=-10V*
I
C
=-250mA,V
CE
=-10V*
I
C
=-400mA,V
CE
=-10V*
MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
pF
V
CB
=-10V, f=1MHz
UNIT
V
V
V
A
A
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
SYMBOL MIN.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
Base-Emitter Turn-on Voltage
Static Forward Current Transfer Ratio
V
BE(on)
h
FE
-220
-200
-5
300
Transition Frequency
Output Capacitance
f
T
C
obo
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
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