SOT23 PNP SILICON PLANAR MEDIUM
POWER HIGH PERFORMANCE TRANSISTOR
ISSUE 5 - JANUARY 1997
7
FEATURES
* Low equivalent on-resistance;
R
CE(sat)
250m鈩?at 1A
PARTMARKING DETAILS -
COMPLEMENTARY TYPE -
589
FMMT489
FMMT589
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
MAX.
VALUE
-50
-30
-5
-2
-1
-200
500
-55 to +150
UNIT
V
V
V
-100
-100
-100
-0.25
-0.35
-0.65
-1.2
-1.1
100
100
80
40
100
15
300
MHz
pF
nA
nA
nA
V
V
V
V
V
CONDITIONS.
I
C
=-100
碌
A
I
C
=-10mA*
I
E
=-100
碌
A
V
CB
=-30V
V
CES
=-30V
V
EB
=-4V
I
C
=-0.5A, I
B
=-50mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1A, V
CE
=-2V*
I
C
=-1mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-100mA, V
CE
=-5V
f=100MHz
V
CB
=-10V, f=1MHz
UNIT
V
V
V
A
A
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
SYMBOL MIN.
V
(BR)CBO
V
(BR)CEO
-50
-30
-5
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Collector Cut-Off Current
Collector -Emitter Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
Emitter-Base Breakdown Voltage V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
鈮?/div>
2%
For typical Characteristics graphs see FMMT549 datasheet
3 - 136
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