SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 - SEPTEMBER 1995
PARTMARKING DETAIL聴
FMMT5088 - 1Q
FMMT5089 - 1R
FMMT5088
FMMT5089
C
B
FMMT5088 FMMT5089
35
30
4.5
50
330
30
25
4.5
50
330
UNIT
V
V
V
mA
mW
擄C
E
COMPLEMENTARY TYPES 聴 FMMT5088 - FMMT5087
FMMT5089 - None Available
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
FMMT5088
35
30
50
50
0.5
0.8
300
350
300
50
4
10
3
350
1400
450
900
400
450
400
50
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector- Base
Cut-Off Current
Emitter-Base Current
Emitter Saturation
Voltages
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance
Emitter-base
Capacitance
Noise Figure
SYMBOL
V
(BR)CBO
V
(BR)CEO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
obo
C
ebo
N
MIN.
MAX. MIN.
25
30
FMMT5089
MAX. UNIT
V
V
50
100
0.5
0.8
1200
MHz
4
10
2
1800
pF
pF
dB
nA
nA
nA
nA
V
V
CONDITIONS.
I
C
=1mA, I
B
=0
I
C
=100
碌
A,I
E
=0*
V
CB
=20V, I
E
=0
V
CB
=15V, I
E
=0
V
EB(off)
=3V, I
C
=0
V
EB(off)
=4.5V, I
C
=0
I
C
=10mA, I
B
=1mA
I
C
=100
碌
A, V
CE
=5V
I
C
=1mA, V
CE
=5V
I
C
=10mA, V
CE
=5V
I
C
=500
碌
A, V
CE
=5V
f=20MHz
V
CB
=5V, f=1MHz, I
E
=0
V
BE
=0.5V, f=1MHz,
I
C
=0
I
C
=200mA, V
CE
=5V,
R
g
=10K
鈩?/div>
, f=10Hz to
15KHz
I
C
=1mA, V
CE
=5V
f=1KHz ++
Small Signal Current h
fe
Transfer Ratio
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
鈮?/div>
2% ++ Periodic Sample test Only
Spice parameter data is available upon request for this device
Page Number
1
