SOT23 PNP SILICON PLANAR
SMALL SIGNAL TRANSISTOR
PARTMARKING DETAIL -
FMMT5087 - 2m
FMMT5087R - 3m
FMMT5088
FMMT5087
C
B
E
COMPLEMENTARY TYPE -
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
VALUE
-50
-50
-3
-100
330
-55 to +150
UNIT
V
V
V
mA
mW
擄C
Operating and Storage Temperature Range T
j
:T
stg
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
PARAMETER
SYMBOL
I
CBO
MIN.
MAX.
Collector-Base
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
ON Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
-10
-50
-50
-300
-850
250
250
250
40
250
900
2
4
dB
pF
800
碌
A
UNIT
nA
nA
mV
mV
CONDITIONS.
V
CB
=-10V, I
E
=0
V
CB
=-35V, I
E
=0
V
EB
=-3V, I
C
=0
I
C
=-10mA, I
B
=-1mA
IC=-1mA, V
CE
=-5V
I
C
=-100
碌
A, V
CE
=-5V
I
C
=-1mA, V
CE
=-5V
I
C
=-10mA, V
CE
=-5V*
Emitter-Base Current I
EBO
V
CE(sat)
V
BE(on)
h
FE
f
T
MHz
I
C
=-500
碌
A, V
CE
=-5V f=20MHz
I
C
=-1mA, V
CE
=-5V f=1KHz
I
C
=200
碌
A, V
CE
=-5V, R
g
=2K
鈩?/div>
f=30Hz to 15KHz at 2dB
points
V
CB
=-5V, f=140MHz, I
E
=0
Small Signal Current h
fe
Transfer Ratio
Noise Figure
Output Capacitance
N
C
obo
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for this device
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