SOT23 NPN SILICON PLANAR MEDIUM
POWER HIGH PERFORMANCE TRANSISTOR
ISSUE 3 - NOVEMBER 1995
PARTMARKING DETAIL 聳
7
495
FMMT495
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
Breakdown Voltages
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
Collector Cut-Off Currents
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Collector-Base
Breakdown Voltage
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
100
100
50
10
100
10
MIN.
170
150
5
100
100
100
0.2
0.3
1.0
1.0
300
MHz
pF
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
:T
stg
MAX.
VALUE
170
150
5
1
2
200
500
-55 to +150
UNIT
V
V
V
nA
nA
nA
V
V
V
V
UNIT
V
V
V
A
A
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
CONDITIONS.
I
C
=100
碌
A
I
C
=10mA*
I
E
=100
碌
A
V
CB
=150V
V
CE
=150V
V
EB
=4V
I
C
=250mA, I
B
=25mA*
I
C
=500mA, I
B
=50mA*
I
C
=500mA, I
B
=50mA*
I
C
=500mA, V
CE
=10V*
I
C
=1mA, V
CE
=10V
I
C
=250mA, V
CE
=10V*
I
C
=500mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
f
T
C
obo
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
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