SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
7
FEATURES
* Low equivalent on-resistance;
R
CE(sat)
210m鈩?at 1A
FMMT491
E
C
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
FMMT591
491
SOT23
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
:T
stg
MIN.
80
60
5
100
100
100
0.25
0.50
1.1
1.0
100
100
80
30
150
10
300
MHz
pF
MAX.
VALUE
80
60
5
1
2
500
-55 to +150
UNIT
V
V
V
nA
nA
nA
V
V
V
V
UNIT
V
V
V
A
A
mW
擄C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Collector-Base
Breakdown Voltage
CONDITIONS.
I
C
=100
碌
A
I
C
=10mA*
I
E
=100
碌
A
V
CB
=60V
V
CES
=60V
V
EB
=4V
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, V
CE
=5V*
I
C
=1mA, V
CE
=5V
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
f
T
C
obo
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
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