SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 聳 OCTOBER 1995
FEATURES
* Very Low Equivalent Resistance,
R
CE(sat)
195m鈩?at 1A
FMMT491A
E
C
COMPLEMENTARY TYPE 聳
PARTMARKING DETAIL 聳
FMMT591A
41A
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Cut-Off Currents
Emitter Cut-Off Current
Saturation Voltages
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
,I
CES
I
EBO
V
CE(sat)
V
BE(sat)
Base Emitter Turn On Voltage
Static Forward Current
Transfer Ratio
V
BE(on)
h
FE
300
300
200
35
150
10
MIN.
40
40
5
100
100
0.3
0.5
1.1
1.0
900
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
:T
stg
MAX.
VALUE
40
40
5
1
2
500
-55 to +150
UNIT
V
V
V
nA
nA
V
V
V
V
UNIT
V
V
V
A
A
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
CONDITIONS.
I
C
=100
碌
A
I
C
=10mA*
I
E
=100
碌
A
V
CB
=30V,V
CES
=30V
V
EB
=4V
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, V
CE
=5V*
I
C
=1mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
MHz
pF
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
Transition Frequency
Collector-Base
Breakdown Voltage
f
T
C
obo
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for this device
3 - 117
1
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