SOT23 NPN SILICON PLANAR
HIGH PERFROMANCE TRANSISTOR
ISSUE 3 - OCTOBER 1995
7
FEATURES
* Low equivalent on-resistance;
R
CE(sat)
400m鈩?at 1A
* 1 Amp continuous current
* P
tot
= 500 mW
COMPLEMENTARY TYPE 聳
PARTMARKING DETAIL 聳
FMMT551
451
FMMT451
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
SYMBOL
V
(BR)CBO
V
CEO(sus)
80
60
5
0.1
0.1
0.35
1.1
50
10
150
15
150
MHz
pF
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
UNIT
V
V
V
碌
A
碌
A
VALUE
80
60
5
2
1
200
500
-55 to +150
CONDITIONS.
I
C
=100
碌
A
I
C
=10mA*
I
E
=100
碌
A
V
CB
=60V
V
EB
=4V
UNIT
V
V
V
A
A
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
MIN. MAX.
Emitter-Base Breakdown V
(BR)EBO
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
Output Capacitance
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
obo
V
V
I
C
=150mA, I
B
=15mA*
I
C
=150mA, I
B
=15mA*
I
C
=150mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
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