FMMT449
FMMT449
C
E
B
SuperSOT
TM
-3
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 2A
continuous. Sourced from Process NB.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J,
T
stg
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
T
A = 25擄C unless otherwise noted
FMMT449
30
50
5
1
2
-55 to +150
Units
V
V
V
A
擄C
Collector Current - Continuous
- Peak Pulse Current
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150擄C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
T
A = 25擄C unless otherwise noted
Max
Characteristic
FMMT449
P
D
R
胃JA
Total Device Dissipation*
Derate above 25擄C
Thermal Resistance, Junction to Ambient
500
4
250
mW
mW/擄C
擄C/W
Units
*Device mounted on FR-4 PCB 4.5鈥?X 5鈥? mounting pad 0.02 in
2
of 2oz copper.
漏
1998Fairchild Semiconducto Corporation
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fmmt449.lwpPrNB revA