SOT23 PNP SILICON PLANAR
GENERAL PURPOSE TRANSISTOR
ISSUE 2 - MARCH 1995
7
FMMT4402
FMMT4403
C
B
E
PARTMARKING DETAILS:
FMMT4402 - 2K
FMMT4403 - 2L
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
FMMT4402
MIN.
-40
-40
-5
-0.1
-0.1
30
50
50
20
30
60
100
100
20
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
FMMT4403
MIN.
-40
-40
-5
-0.1
-0.1
VALUE
-40
-40
-5
-600
330
-55 to +150
UNIT
V
V
V
A
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated)
PARAMETER
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base
Breakdown Current
Collector-Emitter
Cut-Off Current
Base Cut-Off
Current
Static Forward
Current
TransferRatio
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Transition
Frequency
Output Capacitance
Input Capacitance
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
BEX
h
FE
MAX.
MAX.
UNIT CONDITIONS
V
V
V
IC=-1mA, I
B
=0
I
C
=-0.1mA, I
E
=0
IE=-0.1mA, I
C
=0
V
EB(off)
=-0.4V
V
EB(off)
=-0.4V
碌
A V
CE
=-35V
碌
A V
CE
=-35V
150
-0.4
-0.75
300
-0.4
-0.75
V
V
V
V
I
C
=-0.1mA, V
CE
=-1V
I
C
=-1mA, V
CE
=-1V
I
C
=-10mA, V
CE
=-1V
I
C
=-150mA,V
CE
=-2V*
I
C
=-500mA,V
CE
=-2V*
I
C
=-150mA,I
B
=-15mA*
I
C
=-500mA,I
B
=-50mA*
I
C
=-150mA,I
B
=-15mA*
I
C
=-500mA,I
B
=-50mA
V
CE(sat)
V
BE(sat)
f
T
C
obo
C
ibo
-0.75
150
-0.95
-1.3
-0.75
200
-0.95
-1.3
MHz I
C
=-20mA,V
CE
=-10V
f=100MHz
8.5
30
pF V
CB
=-10 V,I
E
=0
f=100kHz
pF V
BE
=0.5V
I
C
=0, f=100kHz
8.5
30
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
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