SOT23 NPN SILICON PLANAR
AVALANCHE TRANSISTOR
ISSUE 4 - OCTOBER 1995
7
FEATURES
* Specifically designed for Avalanche mode operation
* 60A Peak Avalanche Current (Pulse width=20ns)
APPLICATIONS
* Laser LED drivers
* Fast edge generation
* High speed pulse generators
PARTMARKING DETAIL 聳
FMMT415 聳 415
FMMT417 聳 417
FMMT415
FMMT417
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current (Pulse Width=20ns)
Power Dissipation
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown
Voltage
SYMBOL
FMMT415 V
(BR)CES
FMMT417
V
CEO(sus)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
:T
stg
MIN.
260
320
100
6
0.1
10
0.1
0.5
0.9
15
25
25
40
8
MHz
pF
TYP.
FMMT415
260
100
6
500
60
330
-55 to +150
MAX. UNIT
V
V
V
V
碌
A
碌
A
碌
A
SOT23
FMMT417
320
100
UNIT
V
V
V
mA
A
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
CONDITIONS.
I
C
=1mA
T
amb
= -55 to +150擄C
I
C
=1mA
I
C
=100
碌
A
I
E
=10
碌
A
V
CB
=180V
V
CB
=180V,
T
amb
=100擄C
V
EB
=4V
I
C
=10mA, I
B
=1mA*
I
C
=10mA, I
B
=1mA*
V
C
=200V, C
CE
=620pF
V
C
=250V, C
CE
=620pF
I
C
=10mA, V
CE
=10V*
I
C
=10mA, V
CE
=20V
f=20MHz
V
CB
=20V, I
E
=0
f=100MHz
Collector-Emitter Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Current in Second Breakdown
(Pulsed)
Static Forward Current Transfer
Ratio
Transition Frequency
Collector-Base Capacitance
Emitter-Base Breakdown Voltage V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
I
SB
h
FE
f
T
C
cb
V
V
A
A
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
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