SOT23 PNP SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 2 聳 MARCH 1995
PARTMARKING DETAIL 聳
7
ZE
FMMT4126
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
SaturationVoltage
Static Forward
Current Transfer Ratio
Transistion Frequency
Output Capacitance
Input Capacitance
Noise Figure
Small Signal Current
Transfer
PARAMETER
Delay Time
Rise Time
Storage Time
Fall Time
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
obo
C
ibo
N
h
fe
120
60
250
MIN.
-25
-25
-4
-50
-50
0.4
0.95
360
4.5
10
4
120
180
MHz
pF
pF
dB
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
MAX.
UNIT
V
V
V
nA
nA
V
V
VALUE
-25
-25
-4
-200
330
-55 to +150
CONDITIONS.
I
C
=-10
碌
A
I
C
=-1mA*
I
E
=-10
碌
A
V
CB
=-20V
VEB=-3V
I
C
=-50mA, I
B
=-5mA*
IC=-50mA, I
B
=-5mA*
I
C
=-2mA, V
CE
=-1V*
I
C
=-50mA, V
CE
=-1V*
I
C
=-10mA, V
CE
=-20V, f=100MHz
V
CB
=-5V, I
E
=0, f=140KHz
V
BE
=-0.5V, I
E
=0, f=140KHz
I
C
=-200
碌
A, V
CE
=-5V, R
g
=-2k
鈩?/div>
f=30Hz to 15KHz at 3dB points
I
C
=-2mA, V
CE
=-1V, f=1KHz
UNIT
V
V
V
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
SWITCHING CHARACTERISTICS (at T
amb
= 25擄C).
SYMBOL
t
d
t
r
t
s
t
f
TYP.
25
18
140
15
ns
ns
ns
ns
UNIT
CONDITIONS
V
CC
=-3V, V
BE(off)
=-0.5V
I
C
=-10mA, I
B1
=-1mA
V
CC
=-3V, I
C
=-10mA
I
B1
=I
B2
=-1mA
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
1
