SOT23 NPN SILICON PLANAR
HIGH SPEED SWITCHING TRANSISTORS
ISSUE 3 聳 AUGUST 1995
APPLICATIONS
These devices are suitable for use in high speed, low current
switching applications
PARTMARKING DETAILS
FMMT2369
- 1J
FMMT2369R
- 9R
FMMTA2369A - P5
FMMTA2369AR - 9A
FMMT2369
FMMT2369A
C
B
SOT23
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
SYMBOL
V
CBO
V
CES
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
VALUE
40
40
15
4.5
200
330
-55 to +150
UNIT
V
V
V
V
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
Collector-Base
V
(BR)CBO
Breakdown Voltage
Collector-Emitter
V
(BR)CEO
Breakdown Voltage V
(BR)CES
Emitter-Base
V
(BR)EBO
Breakdown Voltage
Collector Cut-Off
I
CBO
Current
Collector-Emitter
V
CE(sat)
Saturation Voltage
Base-Emitter
V
BE(sat)
Saturation Voltage
h
FE
Static Forward
Current Transfer
Ratio
Output Capacitance C
obo
Turn-on Time
t
on
Turn-off Time
Storage Time
t
off
t
s
FMMT2369 FMMT2369A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
40
40
V
I
C
=10
碌
A, I
E
=0
15
40
4.5
400
0.25
0.7
40
20
20
4
12
18
13
0.85
120
0.7
40
20
4
12
18
13
pF
ns
ns
ns
15
40
4.5
25
0.20
0.85
120
V
V
V
nA
V
V
I
C
=10mA, I
B
=0*
I
C
=10
碌
A, V
BE
=0
I
E
=10
碌
A, I
C
=0
V
CB
=20V, I
E
=0
I
C
=10mA, I
B
=1mA*
I
C
=10mA, I
B
=1mA*
I
C
=10mA, V
CE
=1V*
I
C
=10mA, V
CE
=1V, T
amb
=-55擄C*
I
C
=100mA, V
CE
=1V*
I
C
=100mA, V
CE
=2V*
V
CB
=5V, I
E
=0, f=140KHz
V
CC
=3V, V
BE(off)
=1.5V I
C
=10mA,
I
B1
=3mA (See t
ON
circuit)
V
CC
=3V, I
C
=10mA, I
B1
=3mA
I
B2
=1.5mA(See t
OFF
circuit)
I
C
=I
B1
= I
B2
=10mA
(See Storage test circuit)
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for this device
1
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