SOT23 SILICON PLANAR HIGH SPEED
SWITCHING DIODE
ISSUE 2 - OCTOBER 1995
FMMD914
2
DIODE PIN CONNECTION
PARTMARKING DETAIL 聳 5D
1
3
!
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Working Peak Reverse Voltage
Average Rectified Forward Current at
T
amb
=25擄C
Repetitive Peak Forward Current
Power Dissipation at T
amb
= 25擄C
Operating and Storage Temperature Range
SYMBOL
V
RWM
I
F(AV)
I
FRM
P
tot
T
j
:T
stg
VALUE
75
75
225
330
-55 to +150
UNIT
V
mA
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
75
1
25
50
8
4
Total Capacitance
Forward Recovery Voltage
Rectification Efficiency
C
T
V
FM(REC)
畏
r
MAX.
UNIT CONDITIONS.
V
V
碌
A
Reverse Breakdown Voltage V
BR
Forward Voltage
Static Reverse Current
Reverse Recovery Time
V
F
I
R
t
rr
I
R
=100
碌
A
I
F
=10mA
V
R
=20V
V
R
=20V, T
amb
=150 擄C
I
F
= I
RM
=10mA,I
RR
=1mA
R
L
=100
鈩?/div>
I
F
=10mA,I
RR
=1mA, V
R
=6V
R
L
=100
鈩?/div>
V
R
=0, f=1MHz
I
F
=50mA, R
L
=50
鈩?/div>
V
R
=2V,R
L
=5k
鈩?/div>
, C
L
=20pF
Z
source
=50
鈩?/div>
, f=100MHz
nA
ns
ns
pF
V
%
4
2.5
45
Spice parameter data is available upon request for this device
PAGE NUMBER
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SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE
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