鈩?/div>
T
VJ
= 150擄C
T
C
= 25擄C
Conditions
(T
VJ
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
F
t
rr
R
thJC
R
thJH
V
GS
= 10 V; I
D
= I
D90
V
DS
= 20 V; I
D
= 4 mA
V
DS
= V
DSS
; V
GS
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
GS
= 鹵20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 0.5 鈥?V
DSS
; I
D
= I
D90
180
35
85
20
60
80
60
1.2
300
0.93
1.5
2
0.25
Conditions
T
VJ
= 25擄C to 150擄C
Maximum Ratings
100
鹵20
75
50
100
60
5
30
V
V
A
A
A
A
V/ns
mJ
Features
鈥?HiPerFET
TM
technology
- low R
DSon
- low gate charge for high frequency
operation
- unclamped inductive switching (UIS)
capability
- dv/dt ruggedness
- fast intrinsic reverse diode
鈥?ISOPLUS i4-PAC
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered E 72873
Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
drives and power supplies
battery or fuel cell powered
automotive, industrial vehicle etc.
secondary side of mains power
supplies
Characteristic Values
= 25擄C, unless otherwise specified)
min.
typ. max.
18
25 m鈩?/div>
4
V
0.3 mA
mA
200 nA
nC
nC
nC
ns
ns
ns
ns
V
ns
0.5 K/W
K/W
V
GS
= 10 V; V
DS
= 0.5 鈥?V
DSS
I
D
= I
D90
; R
G
= 2
鈩?/div>
(body diode) I
F
= 75 A; V
GS
= 0 V
(body diode) I
F
= 37.5A; -di/dt = 100A/碌s; V
DS
= 25V
with heat transfer paste
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2004 IXYS All rights reserved
1-2
419
FMM75-01F 產(chǎn)品屬性
24
分離式半導(dǎo)體產(chǎn)品
FET - 陣列
HiPerFET™
2 個(gè) N 溝道（雙）
標(biāo)準(zhǔn)型
100V
75A
25 毫歐 @ 50A，10V
4V @ 4mA
180nC @ 10V
-
-
通孔
i4-Pac?-5
ISOPLUS i4-PAC?
管件
FMM75-01F相關(guān)型號(hào)PDF文件下載
IXYS
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