= 12.5 m鈩?/div>
T2
1
5
MOSFET T1/T2
Symbol
V
DSS
V
GS
I
D25
I
D90
I
F25
I
F90
T
C
= 25擄C
T
C
= 90擄C
(diode) T
C
= 25擄C
(diode) T
C
= 90擄C
Conditions
T
VJ
= 25擄C to T
VJmax
Maximum Ratings
150
鹵20
65
50
65
50
V
V
A
A
A
A
Features
鈥?trench MOSFET
- very low on state resistance R
DSon
- fast switching
- fast body diode
鈥?ISOPLUS i4-PAC
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
Applications
鈥?automotive and industrial vehicles
- AC drives
- choppers - replacing series resistors
for DC drives, heating etc.
- DC-DC converters
- electronic switches -replacing relays
and fuses
鈥?power supplies
- DC-DC converters
- solar inverters
鈥?battery supplied systems
- choppers or inverters for drives
- battery chargers
Symbol
Conditions
Characteristic Values
(T
VJ
= 25擄C, unless otherwise specified)
min.
typ. max.
12.5
2
0.1
22 m鈩?/div>
4
V
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
F
t
rr
R
thJC
R
thJH
V
GS
= 10 V; I
D
= I
D90
V
DS
= 20 V; I
D
= 1 mA;
V
DS
= V
DSS
; V
GS
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
GS
= 鹵20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 120 V; I
D
= 75 A
10 碌A(chǔ)
mA
200 nA
230
45
90
35
80
230
100
0.9
130
1.2
1.3
nC
nC
nC
ns
ns
ns
ns
V
ns
0.6 K/W
K/W
V
GS
= 10 V; V
DS
= 0.5 鈥?V
DSS
;
I
D
= 30 A; R
G
= 5.6
鈩?/div>
(diode) I
F
= 32.5 A; V
GS
= 0 V
(diode) I
F
= 20 A; -di/dt = 100 A/碌s; V
DS
= 30 V
with heat transfer paste
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2002 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
1-2
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
213
1
2
