Impedance Matched Zin/Zout = 50鈩?/div>
0.25碌m PHEMT Technology
DESCRIPTION
The FMM5815GJ is a packaged, high-gain, high linearity,
amplifier designed for operation in the17.7-19.7GHz
frequency range. This amplifier has an input and output
designed for use in 50鈩?systems.This device is well suited for
point-to-point communication applications.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25擄C)
Item
Drain-Source Voltage
Gate-Source Voltage
Input Power
Storage Temperature
Operating Case Temperature
Symbol
VDD
VGG
Pin
Tstg
Top
Condition
Rating
10
-7.0
22
-55 to +125
-40 to +85
Unit
V
V
dBm
擄C
擄C
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25擄C)
Item
Frequency Range
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Drain Current at 1 dB G.C.P.
Gate Current at 1 dB G.C.P.
Power-Added Efficiency at 1 dB G.C.P.
Input Return Loss
Output Return Loss
3rd Order Intermodulation
Distortion
Symbol
f
P
1dB
G
1dB
Iddrf
Iggrf
畏
add
RLin
RLout
IM3
鈭唂
= 10MHz, 2-Tone Test,
Pout = 20dBm S.C.L.
VDD = 6V
VGG = -5V
f = 17.7 ~ 19.7GHz
IDD
=
600mA (Typ.)
ZS = ZL = 50鈩?/div>
Conditions
Limits
Min. Typ. Max.
17.7
29
18
-
-
-
-
-
-30
-
31
20
800
-12
25
-10
-6
-35
19.7
-
23
950
-15
-
-
-
-
Unit
GHz
dBm
dB
mA
mA
%
dB
dB
dBc
CASE STYLE:
GJ
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.1
April 2002
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3
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