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FMM5702X Datasheet

  • FMM5702X

  • Microwave/Millimeter Wave Amplifier

  • 4頁

  • ETC

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FMM5702X
27-32GHz LNA MMIC
FEATURES
鈥?Low Noise Figure: NF = 1.6dB (Typ.) @ f=30 GHz
鈥?High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz
鈥?/div>
Wide Frequency Band: 27-32 GHz
鈥?Impedance Matched Zin/Zout = 50鈩?/div>
DESCRIPTION
The FMM5702X is a LNA MMIC designed for
applications in the 27-32 GHz frequency range.
This product is well suited for satellite communications
and radio link applications where low noise and high
gain is required.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25擄C)
Item
Drain-Source Voltage
Input Power
Storage Temperature
Operating Backside Temperature
Symbol
VDD
Pin
Tstg
Top
Condition
Rating
5
-4
-65 to +175
-45 to +125
Unit
V
dBm
擄C
擄C
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 4 volts.
2. This product should be hermetically packaged.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25擄C)
Item
Noise Figure
Associated Gain
Input Return Loss
Output Return Loss
Symbol
NF
G
as
RLin
RLout
VDD = 4V
f = 30.0 GHz
IDD
=
5mA (Typ.)
ZS = ZL = 50鈩?/div>
Conditions
Limits
Min. Typ. Max.
-
11.0
-
-
1.6
13.0
-12
-9
2.0
-
-
-
Unit
dB
dB
dB
dB
Note:
RF parameter sample size 10pcs. Criteria (accept/reject)=(0/1)
Edition 1.0
February 2000
1
This Material Copyrighted by Its Respective Manufacturer

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