鈥?/div>
trench MOSFET
- logic level gate control
- very low on state resistance R
DSon
- fast switching
- fast body diode
鈥?ISOPLUS i4-PAC
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered, E 72873
Applications
鈥?automotive
- AC drives - starter generator
for 12/14V etc.
- choppers - replacing series resistors
for DC drives, heating etc.
- DC-DC converters
- electronic switches -replacing relays
and fuses
鈥?power supplies
- DC-DC converters
- solar inverters
- converters for fuel cells
鈥?battery supplied systems
- choppers or inverters for drives in
hand held tools
- battery chargers
Symbol
Conditions
(T
VJ
Characteristic Values
= 25擄C, unless otherwise specified)
min.
typ. max.
2.8
1.1
0.1
3.9 m鈩?/div>
2
V
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
F
t
rr
R
thJC
R
thJS
V
GS
= 10 V; I
D
= 100 A
V
DS
= 20 V; I
D
= 1 mA
V
DS
= 40 V; V
GS
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
GS
= 鹵20 V; V
DS
= 0 V
V
GS
= 5 V; V
DS
= 14 V; I
D
= 25 A
1 碌A
mA
200 nA
82
17
25
70
270
260
190
1.2
70
1.5
1.7
nC
nC
nC
ns
ns
ns
ns
V
ns
1.0 K/W
K/W
V
GS
= 5 V; V
DS
= 30 V
I
D
= 25 A; R
G
= 10
鈩?/div>
(body diode) I
F
= 100 A; V
GS
= 0 V
(body diode) I
F
= 20A; -di/dt = 100A/碌s; V
DS
= 20V
with heat transfer paste
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2004 IXYS All rights reserved
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